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| BGX400 Silicon Switching Diodes Switching applications High breakdown voltage Halfbridge rectifier 3 2 1 1 3 2 EHA07365 VPS05161 Type BGX400 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Marking GXs 1=C1/A2 Pin Configuration 2=C2 3=A1 Package SOT23 Symbol VR VRM IF IFS Ptot Tj Tstg Value 400 400 250 2 250 150 -65 ... 150 Unit V mA A mW C Surge forward current, t = 1 ms Total power dissipation, TS = 71 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 315 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BGX400 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 1 A IF = 2 A Reverse current VR = 400 V Reverse current VR = 400 V, TA = 150 C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time trr , 1 s CD 10 pF Symbol min. V(BR) VF IR IR 400 Values typ. max. - Unit V - 1.6 2 1 50 A Test circuit for reverse recovery time D.U.T. F Oscillograph 2 Pulse generator: tp = 10s, D = 0.05, tr = 0.6ns, Ri = 50 IF = 200 mA, IR = 200 mA, RL = 100 measured at IR = 20mA EHN00022 Oscillograph: R = 50, tr = 0.35ns, C 1pF Aug-20-2001 BGX400 Forward current IF = f (VF ) TA = 25C 10 1 BAW 78A...D EHB00095 Reverse current IR = f (TA) F A R 10 5 nA BAW 78A...D EHB00097 10 0 10 4 5 max 10 -1 10 3 5 typ. 10 -2 10 2 5 10 -3 0 1 V VF 2 10 1 0 50 100 C TA 150 Forward current IF = f (TS) 300 mA 240 210 IF 180 150 120 90 60 30 0 0 120 C 20 40 60 80 100 150 TS 3 Aug-20-2001 BGX400 Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 K/W 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -1 -6 10 IFmax / IFDC -5 -4 -3 -2 0 RthJS 10 10 10 10 s 10 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Aug-20-2001 |
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